inchange semiconductor product specification silicon npn power transistors 2SD2058 description ? with to-220f package ? complement to type 2sb1366 ? low collector saturation voltage: v ce(sat) =1.0v(max) at i c =2a,i b =0.2a ? collector power dissipation: p c =25w(t c =25 ?? ) applications ? with general purpose applications pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings (ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 60 v v ceo collector-emitter voltage open base 60 v v ebo emitter-base voltage open collector 7 v i c collector current 3 a i b base current 0.5 a t a =25 ?? 1.5 p c collector dissipation t c =25 ?? 25 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? fig.1 simplified outline (to-220f) and symbol
inchange semiconductor product specification 2 silicon npn power transistors 2SD2058 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =50ma ;i b =0 60 v v cesat collector-emitter saturation voltage i c =2a ;i b =0.2a 1.5 v v be base-emitter on voltage i c =0.5a;v ce =5v 3.0 v i cbo collector cut-off current v cb =60v;i e =0 10 | a i ebo emitter cut-off current v eb =7v; i c =0 1.0 ma h fe dc current gain i c =0.5a ; v ce =5v 60 f t transition frequency i c =0.5a ; v ce =5v 3.0 mhz c ob collector output capacitance f=1mhz;v cb =10v 35 pf switching times t on turn-on time 0.65 | s t s storage time 1.30 | s t f fall time i c =2.0a; i b1 =-i b2 =0.2a v cc =30v ,r l =15 |? 0.65 | s ? h fe classifications o y g 60-120 100-200 150-300
inchange semiconductor product specification 3 silicon npn power transistors 2SD2058 package outline fig.2 outline dimensions
inchange semiconductor product specification 4 silicon npn power transistors 2SD2058
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